SI2314EDS-T1-GE3
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SI2314EDS-T1-GE3 datasheet
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МаркировкаSI2314EDS-T1-GE3
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ПроизводительSiliconix
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ОписаниеVishay Intertechnology SI2314EDS-T1-GE3 Continuous Drain Current Id: 3.77A Drain Source Voltage Vds: 20V On Resistance Rds(on): 27mohm Power Dissipation Pd: 750mW Rds(on) Test Voltage Vgs: 4.5V Threshold Voltage Vgs Typ: 950mV Transistor Polarity: N Channel Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 20 V Gate-Source Breakdown Voltage: +/- 12 V Continuous Drain Current: 4.9 A Resistance Drain-Source RDS (on): 33 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: TO-236-3 Minimum Operating Temperature: - 55 C Power Dissipation: 750 mW Factory Pack Quantity: 3000 Part # Aliases: SI2314EDS-GE3
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Количество страниц8 шт.
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